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| TP2520 TP2522 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -200V -220V * Same as SOT-89. RDS(ON) (max) 12 12 VGS(th) (max) -2.4V -2.4V ID(ON) (min) -0.75A -0.75A Order Number / Package TO-243AA* TP2520N8 TP2522N8 Die -- TP2522ND Product supplied on 2000 piece carrier tape reels. MIL visual screening available. Product marking for TO-243AA Features Low threshold -- -2.4V max. High input impedance Low input capacitance -- 125pF max. Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices TP5C Where = 2-week alpha date code Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Package Option D Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 11/12/01 G D S BVDSS BVDGS 20V -55C to +150C 300C TO-243AA (SOT-89) Note: See Package Outline section for dimensions. Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TP2520/TP2522 Thermal Characteristics Package TO-243AA ID (continuous)* -260mA ID (pulsed) -2.0A Power Dissipation @ TA = 25C 1.6W jc ja IDR* -260mA IDRM -2.0A C/W 15 C/W 78 * ID (continuous) is limited by max rated Tj. Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS Parameter Drain-to-Source Breakdown Voltage TP2522 TP2520 VGS(th) VGS(th) IGSS IDSS Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min -220 V -200 -1.0 -2.4 4.5 -100 -10 -1.0 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Notes: 1.All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Typ Max Unit Conditions VGS = 0V, ID = -2mA VGS = VDS, ID= -1mA VGS = VDS, ID= -1mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = -4.5V, VDS = -25V VGS = -10V, VDS = -25V VGS = -4.5V, ID = -100mA VGS = -10V, ID = -200mA VGS = -10V, ID = -200mA VDS = -25V, ID = -200mA VGS = 0V, VDS = -25V f = 1 MHz V mV/C nA A mA ON-State Drain Current -0.25 -0.75 -0.7 -2.1 10 8.0 15 12 1.7 A Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 100 %/C m 250 75 20 10 125 85 35 10 15 20 15 -1.8 300 pF ns V ns Switching Waveforms and Test Circuit 0V 10% INPUT -10V PULSE GENERATOR 90% t(ON) Rgen t(OFF) tr td(OFF) tF INPUT td(ON) 0V 90% OUTPUT VDD 90% 10% 10% 2 VDD = -25V, ID = -0.75A, RGEN = 25 VGS = 0V, ISD = -0.5A VGS = 0V, ISD = -0.5A D.U.T. OUTPUT RL VDD TP2520/TP2522 Typical Performance Curves Output Characteristics -2.5 -2.0 Saturation Characteristics VGS = -10V -2.0 -8V -1.6 ID (amperes) -1.5 ID (amperes) VGS = -10V -1.2 -6V -1.0 -8V -6V -0.8 -0.5 -4V -3V -0.4 -4V -3V 0 -2 -4 -6 -8 -10 0 0 -10 -20 -30 -40 -50 0 VDS (volts) Transconductance vs. Drain Current 1.0 2.0 VDS (volts) Power Dissipation vs. Ambient Temperature 0.8 VDS = -25V TO-243AA GFS (siemens) TA = -55C 0.4 PD (watts) 0.6 1.0 TA = 25C TA = 125C 0.2 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area -10 1.0 TA (C) Thermal Response Characteristics Thermal Resistance (normalized) TA = 25C TO-243AA (pulsed) ID (amperess) -1.0 0.8 0.6 0.4 -0.1 TO-243AA (DC) 0.2 TO-243AA TA = 25C PD = 1.6W -0.01 -1 -10 -100 -1000 0 0.001 0.01 0.1 1 10 VDS (volts) tP (seconds) 3 TP2520/TP2522 Typical Performance Curves BVDSS Variation with Temperature 50 1.1 40 On-Resistance vs. Drain Current BVDSS (normalized) VGS = -4.5V RDS(ON) (ohms) 30 1.0 20 VGS = -10V 10 0.9 0 -50 0 50 100 150 0 -0.5 -1.0 -1.5 -2.0 -2.5 Tj (C) Transfer Characteristics -2.5 1.2 -2.0 ID (amperes) V(th) and RDS Variation with Temperature 2.5 VDS = -25V VGS(th) (normalized) 2.0 25C 1.1 -1.5 1.5 1.0 125C -1.0 V(th) @ -1mA 1.0 0.9 0.5 0.8 -0.5 0 0 -2 -4 -6 -8 -10 -50 0 50 100 150 0 VGS (volts) Capacitance vs. Drain-to-Source Voltage 200 -10 Tj (C) Gate Drive Dynamic Characteristics f = 1MHz -8 150 VDS = -10V C (picofarads) VGS (volts) -6 100 VDS = -40V -4 CISS 50 200pF -2 CRSS 0 0 -10 -20 -30 COSS 0 -40 0 73pF 0.5 1.0 1.5 2.0 2.5 VDS (volts) QG (nanocoulombs) 11/12/01 (c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) TA = -55C ID (amperes) RDS(ON) @ -10V, -0.2A |
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